ATF 34143 PDF

Note : Your request will be directed to Broadcom. Tags: Surface Mount. More details for ATF can be seen below. This device operates from a 50 V rail and is intended to be used as a pre-driver from MHz to MHz You can now find similar products from multiple companies on everything RF.

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Data Sheet. Based on its featured performance, ATF is ideal for. Pin Connections and Package Marking. Noise Applications. Note: Top View. Package marking provides. A new character. Attention: Observe precautions for. Electrostatic Discharge Damage and Control. P diss. P in max. T STG. Drain - Source Voltage [2]. Gate - Source Voltage [2]. Gate Drain Voltage [2]. Drain Current [2]. Total Power Dissipation [4]. RF Input Power.

Channel Temperature. Storage Temperature. Thermal Resistance [5]. I dss [3]. Operation of this device above any one of.

Assumes DC quiescent conditions. Liquid Crystal Measurement method. Under large signal conditions, V GS may. These conditions are acceptable. Product Consistency Distribution Charts [7]. Figure 1. OIP3 dBm. Figure 2. NF dB. Figure 3. GAIN dB. Figure 4. Gain 2 GHz, 4 V, 60 mA. Distribution data sample size is samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based.

Circuit losses have been de-embedded from actual measurements. Download ATF Datasheet. Based on its featured performance, ATF is ideal for the first stage of base station LNA due to the excellent combination of low noise figure and high linearity [1]. Note: 1. Package marking provides orientation and identification. A new character is assigned for each month, year. Operation of this device above any one of these parameters may cause permanent damage.

Under large signal conditions, V GS may swing positive and the drain current may exceed I dss. These conditions are acceptable as long as the maximum P diss and P in max ratings are not exceeded.

Future wafers allocated to this product may have nominal values anywhere within the upper and lower spec limits. This circuit represents a trade-off between an optimal noise match and a realizeable match based on production test requirements.

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Ultra Low Noise HEMT RF 2GHz ATF34143

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ATF-34143 HEMT. Datasheet pdf. Equivalent

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