HGTG30N60A4D PDF

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Data Sheet. December Anti-Parallel Hyperfast Diode. This device has the high input. The much lower on-state voltage. The diode. This IGBT is ideal for many high voltage switching. This device has been.

Formerly Developmental Type TA Ordering Information. NOTE: When ordering, use the entire part number. Collector to Emitter Voltage. BV CES. Collector Current Continuous. I C Collector Current Pulsed Note 1. Gate to Emitter Voltage Continuous. V GES. Gate to Emitter Voltage Pulsed. V GEM. Operating and Storage Junction Temperature Range. Maximum Temperature for Soldering. This is a stress only rating and operation of the. Pulse width limited by maximum junction temperature. Collector to Emitter Breakdown Voltage.

Collector to Emitter Leakage Current. Collector to Emitter Saturation Voltage. Gate to Emitter Threshold Voltage. Gate to Emitter Leakage Current. Switching SOA. Gate to Emitter Plateau Voltage. On-State Gate Charge. Current Turn-On Delay Time. Current Rise Time. Current Turn-Off Delay Time. Current Fall Time. Turn-On Energy Note 2. Turn-Off Energy Note 3. Diode Forward Voltage. Diode Reverse Recovery Time.

I CES. V GE TH. I GES. V GEP. E ON1. E ON2. E OFF. Test Circuit Figure The much lower on-state voltage drop varies only moderately between 25 o C and o C. The diode used in anti-parallel is the development type TA This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. NOTE: 1.

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